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20V P-Channel Power MOSFET General Description
The AAT8303 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's proprietary ultrahigh-density trench technology and space-saving, small-outline, J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOPJW-8 package.
AAT8303
Features
* * * Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -10A @ 25C Low On-Resistance: -- 14m @ VGS = -4.5V -- 24m @ VGS = -2.5V
TSOPJW-8 Package
Top View
D 8 D 7 D 6 D 5
Applications
* * * * Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Load Switches
Absolute Maximum Ratings
TA = 25C, unless otherwise noted. Symbol
VDS VGS ID IDM IS TJ TSTG
1 S
2 S
3 S
4 G
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25C TA = 70C
Value
-20 12 10 8 48 -2.3 -55 to 150 -55 to 150
Units
V
A
C C
Thermal Characteristics1
Symbol
RJA RJA2 RJF PD
Description
Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25C TA = 70C
Typ
86 44 27
Max
105 54 32 2.3 1.5
Units
C/W C/W C/W W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 8303.2005.04.1.0
1
20V P-Channel Power MOSFET Electrical Characteristics
TJ = 25C, unless otherwise noted. Symbol Description
DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance1
AAT8303
Conditions
VGS = 0V, ID = -250A
Min
-20
Typ
Max
Units
V
VGS = -4.5V, ID = -10A VGS = -2.5V, ID = -7.6A ID(ON) On-State Drain Current1 VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250A IGSS Gate-Body Leakage Current VGS = 12V, VDS = 0V V = 0V, VDS = -20V IDSS Drain Source Leakage Current GS VGS = 0V, VDS = -16V, TJ = 70C2 gfs Forward Transconductance1 VDS = -5V, ID = -10A 2 Dynamic Characteristics QG Total Gate Charge VDS = -10V, RD = 1.0, VGS = -4.5V QGS Gate-Source Charge VDS = -10V, RD = 1.0, VGS = -4.5V QGD Gate-Drain Charge VDS = -10V, RD = 1.0, VGS = -4.5V tD(ON) Turn-On Delay VDS = -10V, VGS = -4.5V, RD = 1.0, RG = 6 tR Turn-On Rise Time VDS = -10V, VGS = -4.5V, RD = 1.0, RG = 6 tD(OFF) Turn-Off Delay VDS = -10V, VGS = -4.5V, RD = 1.0, RG = 6 tF Turn-Off Fall Time VDS = -10V, VGS = -4.5V, RD = 1.0, RG = 6 Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -10A Voltage1 IS Continuous Diode Current3
11 18 -48 -0.6
14 24
m A V nA A S
100 -1 -5 31 36 5 13 10 72 78 108 -1.1 -2.3
nC
ns
V A
1. Pulse test: Pulse Width = 300s. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
8303.2005.04.1.0
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25C, unless otherwise noted.
Output Characteristics
48 40 32
AAT8303
Transfer Characteristics
48
5V 4.5V 3V
4V 3.5V 2.5V
VD=VG
40 32
IDS (A)
ID (A)
24
24 16 8
2V
16 8 0 0 0 .5 1 1 .5 2 2 .5 3
25C -55C
0 1
1.5V
125C
2 3 4
0
VDS (V)
VGS (V)
On-Resistance vs. Drain Current
0.06 0.04
On-Resistance vs. Gate-to-Source Voltage
ID = 10A
0.032
RDS(ON) ()
0.024
VGS = 2.5V
0.016
RDS(ON) ()
0.04
0.02
0.008
VGS = 4.5V
0 0 8 16 24 32 40 48 0 1 2 3 4 5
0
ID (A)
VGS (V)
On-Resistance vs. Junction Temperature
1.6 1.5
Threshold Voltage
0.5
Normalized RDS(ON)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
VGS(th) Variance (V)
VGS = 4.5V ID = 10A
0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -50
ID = 250A
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ (C)
TJ (C)
8303.2005.04.1.0
3
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25C, unless otherwise noted.
Gate Charge
5 4 3
AAT8303
Source-Drain Diode Forward Voltage
100
VD=10V ID=10A
10
VGS (V)
IS (A)
2 1 0 0 5 10 15 20 25 30 35 40
TJ = 150C
1
TJ = 25C
0.1 0 0 .2 0.4 0 .6 0.8 1 1.2
QG, Charge (nC)
VSD (V)
Capacitance
5000
Single Pulse Power, Junction to Ambient
50 45 40
Capacitance (pF)
4000
Power (W)
Ciss
35 30 25 20 15 10 5 0 0.001
3000
2000
Coss Crss
1000
0 0 5 10 15 20
0.01
0.1
1
10
100
1000
VDS (V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective Transient Thermal Impedance
10
1
.5 .2 .1 .02
0.1
.01 Single Pulse
0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
4
8303.2005.04.1.0
20V P-Channel Power MOSFET Ordering Information
Package
TSOPJW-8
AAT8303
Marking1
JXXYY
Part Number (Tape and Reel)2
AAT8303ITS-T1
Package Information
TSOPJW-8
0.325 0.075
2.40 0.10
0.65 BSC 0.65 BSC 0.65 BSC
2.85 0.20
7 3.025 0.075
0.9625 0.0375 1.0175 0.0925
0.04 REF
0.055 0.045
0.010
0.15 0.05
0.45 0.15 2.75 0.25
All dimensions in millimeters.
1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 8303.2005.04.1.0
5
20V P-Channel Power MOSFET
AAT8303
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6
8303.2005.04.1.0

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